| PART |
Description |
Maker |
| MX25L51245GMI-10G |
3V, 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| H27U4G6F2D H27U4G8F2D H27U4G8F2DKA-BM H27U4G8F2DTR |
4 Gbit (512M x 8 bit) NAND Flash
|
Hynix Semiconductor
|
| KVR13N9S8-4 |
4GB 1Rx8 512M x 64-Bit PC3-10600
|
List of Unclassifed Man...
|
| KVR16LSE11-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR800D2D4P6K2-8G |
8GB (4GB 512M x 72-Bit x 2 pcs.) DDR2-800
|
List of Unclassifed Man...
|
| E0C6SB32Q14 E0C6S32 |
4-Bit Microcontroller
Advanced Single-Chip CMOS 4-Bit Microcomputer Consisting of the E0C6200A 4-Bit CMOS Core CPU,SVD Circuit/Comparator,Event Counter(4位高级的、CMOS、单片微型计算机（含4位E0C62000A中央处理器核SVD电路/比较事件计数器）)
|
爱普生（中国）有限公
|
| HN29V51211T-50 HN29V51211 |
512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
|
HITACHI[Hitachi Semiconductor]
|
| 23L51220-90 |
512M-BIT (16M x 32) MASK ROM WITH PAGE MODE (SSOP ONLY) (for socket solution only)
|
Macronix International Co., Ltd.
|
| HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
|
Hitachi Semiconductor
|
